inchange semiconductor isc product specification isc silicon npn power transistor 2SC3550 description high collector-emitter breakdown voltage- : v (br)ceo = 800v(min) high switching speed high reliability applications switching regulators ultrasonic generators high frequency inverters general purpose power amplifiers absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 900 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 10 v i c collector current-continuous 3 a i b b base current-continuous 1 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3550 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 800 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 900 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 10 v v ce (sat) collector-emitter saturation voltage i c = 1a; i b = 0.2a b 1.0 v v be (sat) base-emitter saturation voltage i c = 1a; i b = 0.2a b 1.5 v i cbo collector cutoff current v cb = 900v; i e =0 1.0 ma i ebo emitter cutoff current v eb = 10v; i c =0 1.0 ma h fe dc current gain i c = 1a; v ce = 5v 10 switching times t on turn-on time 1.0 s t stg storage time 4.0 s t f fall time i c = 1a, i b1 = 0.4a; i b2 = -0.8a; r l = 150 ; p w = 20 s; duty cycle 2% 0.8 s isc website www.iscsemi.cn 2
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